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| 2012/10/22 ver.2 page 1 sp c5604 n & p pair enhancement mode mosfet description applications the spc5604 is the n- and p-channel enhancement mode power field effect transistors are p roduced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on- state resistance and provide superior switching performan ce. these devices are particularly suited for low volta ge applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. power management in note book battery powered system dc/dc converter lcd display inverter features pin configuration ( to-252-5l ) ( to-252-4l ) n-channel 40v/10a,r ds(on) = 24m ? @v gs = 10v 40v/ 8a,r ds(on) = 28m ? @v gs = 4.5v 40v/ 6a,r ds(on) = 32m ? @v gs = 2.5v p-channel -40v/-10a,r ds(on) = 32m ? @v gs =- 10v -40v/- 8a,r ds(on) = 42m ? @v gs =- 4.5v super high density cell design for extremely low rds (on) exceptional on-resistance and maximum dc current capability to-252-5l package design part marking
2012/10/22 ver.2 page 2 sp c5604 n & p pair enhancement mode mosfet pin description pin description(to-252-5l) description(to-252-4l) 1 source 1 source 1 2 gate 1 gate 1 3 drain1/drain2 drain 4 source 2 source 2 5 gate 2 gate 2 ordering information part number package part marking spc5604t255rgb t0-252-5l spc5604 SPC5604T254RGB t0-252-4l spc5604 spc5604t255rgb: 13 tape reel ; pb C free ; halogen C free SPC5604T254RGB :13 tape reel ; pb C free ; halogen C free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit n-channel p-channel drain-source voltage v dss 40 -40 v gate Csource voltage v gss 20 20 v continuous drain current(t j =150 ) t a =25 i d 10.0 -10.0 a t a =70 7.0 -7.0 pulsed drain current i dm 25 -25 a continuous source current(diode conduction) i s 2.3 -2.3 a power dissipation t a =25 p d 2.5 2.8 w t a =70 1.6 1.8 operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient t 10sec r ja 50 52 /w steady state 80 80 2012/10/22 ver.2 page 3 sp c5604 n & p pair enhancement mode mosfet electrical characteristics ( nmos ) (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 40 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.5 1.0 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =32v,v gs =0v 1 ua v ds =32v,v gs =0v t j =85 10 on-state drain current i d(on) v ds = 5v,v gs =4.5v 10 a drain-source on-resistance r ds(on) v gs = 10v,i d =10a 0.018 0.024 ? v gs =4.5v,i d = 8a 0.022 0.028 v gs =2.5v,i d = 6a 0.026 0.032 forward transconductance gfs v ds =15v,i d =6.2a 13 s diode forward voltage v sd i s =2.3a,v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =20v,v gs =4.5v i d = 5a 10 14 nc gate-source charge q gs 2.8 gate-drain charge q gd 3.2 input capacitance c iss v ds =20v,v gs =0v f=1mhz 850 pf output capacitance c oss 110 reverse transfer capacitance c rss 75 turn-on time t d(on) v dd =20v,r l =4 ? i d 5.0a,v gen =10v r g =1 ? 6 12 ns t r 10 20 turn-off time t d(off) 20 36 t f 6 12 2012/10/22 ver.2 page 4 sp c5604 n & p pair enhancement mode mosfet electrical characteristics ( pmos ) (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -40 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.8 -2.5 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =-32v,v gs =0v -1 ua v ds =-32v,v gs =0v t j =85 -10 on-state drain current i d(on) v ds = -5v,v gs =-4.5v -10 a drain-source on-resistance r ds(on) v gs =-10v,i d =-10a 0.028 0.032 ? v gs =-4.5v,i d =- 8a 0.038 0.042 forward transconductance gfs v ds =-15v,i d =-5.7a 13 s diode forward voltage v sd i s =-2.3a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g v ds =-20v,v gs =-4.5v i d = -5.0a 13 20 nc gate-source charge q gs 4.5 gate-drain charge q gd 6.5 input capacitance c iss v ds =-20v,v gs =0v f=1mhz 1100 pf output capacitance c oss 145 reverse transfer capacitance c rss 115 turn-on time t d(on) v dd =-20v,r l =4 ? i d -5.0a,v gen =-4.5v r g =1 ? 40 80 ns t r 55 100 turn-off time t d(off) 30 60 t f 12 20 2012/10/22 ver.2 page 5 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( nmos ) 2012/10/22 ver.2 page 6 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( nmos ) 2012/10/22 ver.2 page 7 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( nmos ) 2012/10/22 ver.2 page 8 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( pmos ) 2012/10/22 ver.2 page 9 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( pmos ) 2012/10/22 ver.2 page 10 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( pmos ) 2012/10/22 ver.2 page 11 sp c5604 n & p pair enhancement mode mosfet typical characteristics ( pmos ) 2012/10/22 ver.2 page 12 sp c5604 n & p pair enhancement mode mosfet to-252-5l package outline 2012/10/22 ver.2 page 13 sp c5604 n & p pair enhancement mode mosfet to-252-4l package outline 2012/10/22 ver.2 page 14 sp c5604 n & p pair enhancement mode mosfet information provided is alleged to be exact and con sistent. sync power corporation presumes no respon sibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise un der any patent or patent rights of sync power corpo ration. conditions mentioned in this publication are subject to change without notice. this publication surpasses and re places all information previously supplied. sync power corporation produc ts are not authorized for use as critical component s in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of s ync power corporation ?2004 sync power corporation C printed in taiwan C all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com |
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